NVLUS4C12N MOSFET Transistor

The NVLUS4C12N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVLUS4C12N transistor as follows.

NVLUS4C12N Transistor Specification

Transistor Code		NVLUS4C12N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UDFN6
Transistor SMD Code		AG
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	1.54W
Drain-Source Capacitance		546pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		8.4nC

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