NVD5414N MOSFET Transistor

The NVD5414N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5414N transistor as follows.

NVD5414N Transistor Specification

Transistor Code		NVD5414N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5414N
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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