NVD4810N MOSFET Transistor

The NVD4810N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD4810N transistor as follows.

NVD4810N Transistor Specification

Transistor Code		NVD4810N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		4810N
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	54A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		284pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		20.7nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.2nC

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