NVD4809N MOSFET Transistor

The NVD4809N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD4809N transistor as follows.

NVD4809N Transistor Specification

Transistor Code		NVD4809N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		4809N
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		315pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21.3nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		11nC

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