NTZD5110N MOSFET Transistor

The NTZD5110N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTZD5110N transistor as follows.

NTZD5110N Transistor Specification

Transistor Code		NTZD5110N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT563
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.19Ohm
Power Dissipation (Maximum)	PD	0.28W

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