NDH832P MOSFET Transistor

The NDH832P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDH832P transistor as follows.

NDH832P Transistor Specification

Transistor Code		NDH832P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.8W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		30nC

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