MTP2317N3 MOSFET Transistor

The MTP2317N3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2317N3 transistor as follows.

MTP2317N3 Transistor Specification

Transistor Code		MTP2317N3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		159pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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