MTN2310N3 MOSFET Transistor

The MTN2310N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN2310N3 transistor as follows.

MTN2310N3 Transistor Specification

Transistor Code		MTN2310N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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