MTED6N25KJ3 MOSFET Transistor

The MTED6N25KJ3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTED6N25KJ3 transistor as follows.

MTED6N25KJ3 Transistor Specification

Transistor Code		MTED6N25KJ3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.422Ohm
Power Dissipation (Maximum)	PD	78W
Drain-Source Capacitance		43pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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