MTB160N25J3 MOSFET Transistor

The MTB160N25J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB160N25J3 transistor as follows.

MTB160N25J3 Transistor Specification

Transistor Code		MTB160N25J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		121pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		2.5V

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