MTB110P10F3 MOSFET Transistor

The MTB110P10F3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB110P10F3 transistor as follows.

MTB110P10F3 Transistor Specification

Transistor Code		MTB110P10F3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		104pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18.2nS

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