MTB06N03V8 MOSFET Transistor

The MTB06N03V8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB06N03V8 transistor as follows.

MTB06N03V8 Transistor Specification

Transistor Code		MTB06N03V8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		308pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Total Gate Charge		37nC

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