MTA55N02N3 MOSFET Transistor

The MTA55N02N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTA55N02N3 transistor as follows.

MTA55N02N3 Transistor Specification

Transistor Code		MTA55N02N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		61pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.4nS

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