MSD30P06 MOSFET Transistor

The MSD30P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSD30P06 transistor as follows.

MSD30P06 Transistor Specification

Transistor Code		MSD30P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V

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