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MFE960 MOSFET Transistor

The MFE960 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MFE960 transistor as follows.

Circuit diagram symbol of the MFE960 transistor

MFE960 Transistor Specification

Transistor Code MFE960
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-205AD
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.7Ohm
Power Dissipation (Maximum) PD 6.25W
Drain-Source Capacitance 49pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3.5V

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