MDV5524URH MOSFET Transistor

The MDV5524URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDV5524URH transistor as follows.

MDV5524URH Transistor Specification

Transistor Code		MDV5524URH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0144Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.2nS
Gate-Threshold Voltage (Maximum)		2.4V

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