MDI6N60BTH MOSFET Transistor

The MDI6N60BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDI6N60BTH transistor as follows.

MDI6N60BTH Transistor Specification

Transistor Code		MDI6N60BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.45Ohm
Power Dissipation (Maximum)	PD	73W
Drain-Source Capacitance		77pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.2nS
Gate-Threshold Voltage (Maximum)		4V

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