MDF1903TH MOSFET Transistor

The MDF1903TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF1903TH transistor as follows.

MDF1903TH Transistor Specification

Transistor Code		MDF1903TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	33.8W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.6nS
Gate-Threshold Voltage (Maximum)		3V

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