L1N60F MOSFET Transistor

The L1N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the L1N60F transistor as follows.

L1N60F Transistor Specification

Transistor Code		L1N60F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	23W
Drain-Source Capacitance		16pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.2nC

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