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KX1N60DS MOSFET Transistor

The KX1N60DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KX1N60DS transistor as follows.

Circuit diagram symbol of the KX1N60DS transistor

KX1N60DS Transistor Specification

Transistor Code KX1N60DS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23-3
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.03A
Drain-Source On-State Resistance (Maximum) RDS(on) 350Ohm
Power Dissipation (Maximum) PD 0.5W
Drain-Source Capacitance 4.53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55.8nS

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