KX1N60DS MOSFET Transistor

The KX1N60DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KX1N60DS transistor as follows.

KX1N60DS Transistor Specification

Transistor Code		KX1N60DS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23-3
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	350Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		4.53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55.8nS

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