KMB060N60PA MOSFET Transistor

The KMB060N60PA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB060N60PA transistor as follows.

KMB060N60PA Transistor Specification

Transistor Code		KMB060N60PA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		220nS

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