KHB9D0N90N1 MOSFET Transistor

The KHB9D0N90N1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB9D0N90N1 transistor as follows.

KHB9D0N90N1 Transistor Specification

Transistor Code		KHB9D0N90N1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.12Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		183pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS

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