KHB7D0N65P1 MOSFET Transistor

The KHB7D0N65P1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB7D0N65P1 transistor as follows.

KHB7D0N65P1 Transistor Specification

Transistor Code		KHB7D0N65P1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		113pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS

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