KDS3512 MOSFET Transistor

The KDS3512 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDS3512 transistor as follows.

KDS3512 Transistor Specification

Transistor Code		KDS3512
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		58pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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