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K2611SB MOSFET Transistor

The K2611SB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the K2611SB transistor as follows.

Circuit diagram symbol of the K2611SB transistor

K2611SB Transistor Specification

Transistor Code K2611SB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3PB
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.35Ohm
Power Dissipation (Maximum) PD 276W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 58nC

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