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IXTR32P60P MOSFET Transistor

The IXTR32P60P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR32P60P transistor as follows.

Circuit diagram symbol of the IXTR32P60P transistor

IXTR32P60P Transistor Specification

Transistor Code IXTR32P60P
Transistor Type MOSFET
Control Channel Type P-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.385Ohm
Power Dissipation (Maximum) PD 310W
Operating Junction Temperature (Maximum) 150°C
Rise Time 480nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 196nC

IXTR32P60P MOSFET Transistor Overview

The IXTR32P60P is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a ISOPLUS247 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXTR32P60P MOSFET

Followings are the key electrical characteristics of the IXTR32P60P MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXTR32P60P MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IXTR32P60P MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXTR32P60P MOSFET transistor is 18A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXTR32P60P MOSFET transistor when the transistor is fully turned on is 0.385 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXTR32P60P MOSFET transistor can comfortably transfer into heat without breaking is 310W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXTR32P60P MOSFET transistor is switched on is 480nS. This is the rate at which IXTR32P60P MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IXTR32P60P MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IXTR32P60P MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IXTR32P60P MOSFET transistor. You can download the official IXTR32P60P MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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