IXFR15N100Q3 MOSFET Transistor

The IXFR15N100Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR15N100Q3 transistor as follows.

IXFR15N100Q3 Transistor Specification

Transistor Code		IXFR15N100Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		64nC

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