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IXTR20P50P MOSFET Transistor

The IXTR20P50P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR20P50P transistor as follows.

Circuit diagram symbol of the IXTR20P50P transistor

IXTR20P50P Transistor Specification

Transistor Code IXTR20P50P
Transistor Type MOSFET
Control Channel Type P-Channel
Package ISOPLUAS247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.49Ohm
Power Dissipation (Maximum) PD 190W
Operating Junction Temperature (Maximum) 150°C
Rise Time 406nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 103nC

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