IXTQ26P20P MOSFET Transistor

The IXTQ26P20P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ26P20P transistor as follows.

IXTQ26P20P Transistor Specification

Transistor Code		IXTQ26P20P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		175°C
Rise Time		240nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		56nC

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