IXTP50N20PM MOSFET Transistor

The IXTP50N20PM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP50N20PM transistor as follows.

IXTP50N20PM Transistor Specification

Transistor Code		IXTP50N20PM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	90W
Operating Junction Temperature (Maximum)		175°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		70nC

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