IXTN32P60P MOSFET Transistor

The IXTN32P60P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN32P60P transistor as follows.

IXTN32P60P Transistor Specification

Transistor Code		IXTN32P60P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	890W
Operating Junction Temperature (Maximum)		150°C
Rise Time		480nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		196nC

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