IXTK110N30 MOSFET Transistor

The IXTK110N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK110N30 transistor as follows.

IXTK110N30 Transistor Specification

Transistor Code		IXTK110N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	730W
Operating Junction Temperature (Maximum)		150°C
Rise Time		350nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		390nC

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