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IXTH6N90 MOSFET Transistor

The IXTH6N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH6N90 transistor as follows.

Circuit diagram symbol of the IXTH6N90 transistor

IXTH6N90 Transistor Specification

Transistor Code IXTH6N90
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 180W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 88nC

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