IXTH4N150 MOSFET Transistor

The IXTH4N150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH4N150 transistor as follows.

IXTH4N150 Transistor Specification

Transistor Code		IXTH4N150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	280W
Operating Junction Temperature (Maximum)		150°C
Rise Time		900nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		44.5nC

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