IXTH36P10 MOSFET Transistor

The IXTH36P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH36P10 transistor as follows.

IXTH36P10 Transistor Specification

Transistor Code		IXTH36P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		95nC

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