IXTH2N170D2 MOSFET Transistor

The IXTH2N170D2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH2N170D2 transistor as follows.

IXTH2N170D2 Transistor Specification

Transistor Code		IXTH2N170D2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	1700V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.5Ohm
Power Dissipation (Maximum)	PD	568W
Drain-Source Capacitance		206pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Total Gate Charge		110nC

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