IXTH200N10T MOSFET Transistor

The IXTH200N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH200N10T transistor as follows.

IXTH200N10T Transistor Specification

Transistor Code		IXTH200N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	550W
Operating Junction Temperature (Maximum)		175°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		152nC

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