IXTH02N250 MOSFET Transistor

The IXTH02N250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH02N250 transistor as follows.

IXTH02N250 Transistor Specification

Transistor Code		IXTH02N250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	2500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	450Ohm
Power Dissipation (Maximum)	PD	57W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1500nS
Gate-Threshold Voltage (Maximum)		4.5V

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