IXTC75N10 MOSFET Transistor

The IXTC75N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTC75N10 transistor as follows.

IXTC75N10 Transistor Specification

Transistor Code		IXTC75N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	230W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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