IXTA182N055T MOSFET Transistor

The IXTA182N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA182N055T transistor as follows.

IXTA182N055T Transistor Specification

Transistor Code		IXTA182N055T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	182A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	360W
Operating Junction Temperature (Maximum)		175°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		114nC

UXPython is not the creator or an official representative of the IXTA182N055T MOSFET transistor. You can download the official IXTA182N055T MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXTA6N50D2 MOSFET Transistor 2SK3650-01S MOSFET Transistor IXTA76N075T MOSFET Transistor CEB20P10 MOSFET Transistor AP18P10GS MOSFET Transistor SM6033NSG MOSFET Transistor BRB80N08 MOSFET Transistor IXTA2N100 MOSFET Transistor AP8600S MOSFET Transistor RU190N08S MOSFET Transistor 2SK4066-DL-1E MOSFET Transistor IXTA60N10T MOSFET Transistor 2SK3900 MOSFET Transistor AOB7S60L MOSFET Transistor 2SK2901-01S MOSFET Transistor CEB75N06 MOSFET Transistor AP60T10GS MOSFET Transistor CEB6601 MOSFET Transistor AP3N4R0S MOSFET Transistor IRF830ASPBF MOSFET Transistor