IXKR40N60C MOSFET Transistor

The IXKR40N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKR40N60C transistor as follows.

IXKR40N60C Transistor Specification

Transistor Code		IXKR40N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	280W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		250nC

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