IXKH35N60C5 MOSFET Transistor

The IXKH35N60C5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKH35N60C5 transistor as follows.

IXKH35N60C5 Transistor Specification

Transistor Code		IXKH35N60C5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	357W
Operating Junction Temperature (Maximum)		150°C
Rise Time		450nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		60nC

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