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IXKC19N60C5 MOSFET Transistor

The IXKC19N60C5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKC19N60C5 transistor as follows.

Circuit diagram symbol of the IXKC19N60C5 transistor

IXKC19N60C5 Transistor Specification

Transistor Code IXKC19N60C5
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 19A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.125Ohm
Power Dissipation (Maximum) PD 132W
Operating Junction Temperature (Maximum) 150°C
Rise Time 430nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 53nC

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