IXFX26N60Q MOSFET Transistor

The IXFX26N60Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX26N60Q transistor as follows.

IXFX26N60Q Transistor Specification

Transistor Code		IXFX26N60Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	357W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		150nC

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