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IXFR64N60P MOSFET Transistor

The IXFR64N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR64N60P transistor as follows.

Circuit diagram symbol of the IXFR64N60P transistor

IXFR64N60P Transistor Specification

Transistor Code IXFR64N60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 36A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 200nC

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