IXFQ10N80P MOSFET Transistor

The IXFQ10N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFQ10N80P transistor as follows.

IXFQ10N80P Transistor Specification

Transistor Code		IXFQ10N80P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		40nC

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