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IXFC80N10 MOSFET Transistor

The IXFC80N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFC80N10 transistor as follows.

Circuit diagram symbol of the IXFC80N10 transistor

IXFC80N10 Transistor Specification

Transistor Code IXFC80N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS-220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0125Ohm
Power Dissipation (Maximum) PD 230W
Drain-Source Capacitance 1675pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

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