IRLS3036PBF MOSFET Transistor

The IRLS3036PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLS3036PBF transistor as follows.

IRLS3036PBF Transistor Specification

Transistor Code		IRLS3036PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	195A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	380W
Drain-Source Capacitance		1020pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		220nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		140nC

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