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IRLR8729PBF MOSFET Transistor

The IRLR8729PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8729PBF transistor as follows.

Circuit diagram symbol of the IRLR8729PBF transistor

IRLR8729PBF Transistor Specification

Transistor Code IRLR8729PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 58A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0089Ohm
Power Dissipation (Maximum) PD 55W
Drain-Source Capacitance 280pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 47nS
Gate-Threshold Voltage (Maximum) 2.35V

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