IRLI640GPBF MOSFET Transistor

The IRLI640GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLI640GPBF transistor as follows.

IRLI640GPBF Transistor Specification

Transistor Code		IRLI640GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	9.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		2V

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